▎ 摘　　要

NOVELTY - High temperature device supporting switch comprises 12-20 pts. wt. graphene modified phenolic resin, 9-18 pts. wt. silicone modified polycarbonate, 5-10 pts. wt. epoxy resin, 3-7 pts. wt. zinc stearate, 6-13 pts. wt. glass microbeads, 3-8 pts. wt. nano titanium dioxide, 8-15 pts. wt. kaolin, 6-13 pts. wt. modified attapulgite clay, 1-3 pts. wt. antioxidant, and 7-16 pts. wt. filler. USE - High temperature device supporting switch. ADVANTAGE - The high temperature device supporting switch has high temperature resistance, aging resistance, corrosion resistance and insulation, and is applied to high temperature equipment, which greatly improves safety of use of the equipment, and has good application value and prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a high temperature device supporting switch, which involves: (A) weighing graphene modified phenolic resin, silicone modified polycarbonate, epoxy tree and zinc stearate according to the ratio, and adding to the internal mixer and mixing at 120-130 degrees C for 7 minutes to obtain a mixture a1; (B) weighing glass beads, nano-titanium dioxide and kaolin according to the ratio, then placing in a ball mill, adding water to the ball mill, ball mill for 6-8 hours, removing water to obtain the mixture a2; (C) placing mixture a1 and the mixture a2 in the reaction vessel, mixed and stirring uniformly, and then adding modified amount of the modified attapulgite clay, the antioxidant and the filler, mixing, heating reactor to 140-150 degrees C, the incubation reaction for 10-15 minutes, cooling to obtain a mixture a3; and (D) putting mixture a3 into a mold cavity for hot press forming, where hot pressing temperature is 150-160 degrees C, the hot pressing pressure is 250-260 mega Pascal, and the hot pressing curing time is 20-30 minutes, cooling to obtain high temperature device supporting switch.