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  • 专利标题:   Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.
  • 专利号:   CN107500277-A, US2019094128-A1, JP2019060014-A
  • 发明人:   WANG H, CHEN L, HE L, XIE H, WANG X, XIE X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/186, B82Y040/00, C01B032/182, G01N021/17, C23C016/26, C30B029/64
  • 专利详细信息:   CN107500277-A 22 Dec 2017 C01B-032/186 201813 Pages: 14 Chinese
  • 申请详细信息:   CN107500277-A CN10890641 27 Sep 2017
  • 优先权号:   CN10890641

▎ 摘　　要

NOVELTY - Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas where first reaction gas contains carbon source gas and controlling the flowrate of first reaction gas to form graphene structure having first boundary shape on the surface of insulating substrate. USE - Method for controlling graphene boundary (claimed).