▎ 摘　　要

NOVELTY - The device has a semiconductor active structure (102) which is formed on a semiconductor substrate (101). A lower dielectric layer (103) is formed around the semiconductor active structure. A metal electrode and a plasmon waveguide structure (104) are formed on the semiconductor active structure and the lower dielectric layer. A graphene structure (107) is formed on an upper dielectric layer (106). The graphene metal electrode and FET waveguide structure (108) are formed on the graphene structure. A back electrode (110) is formed on the back surface of the semiconductor substrate. USE - Surface plasmonic excitation and electrical modulation integrated electronic device. ADVANTAGE - The device is made as simple structure, and the convenient integration of the device is achieved. The induced excitation of the surface plasmon is realized for broadband, and the high speed modulation to the electrostatically excited surface plasmonic propagation is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing surface plasmonic excitation and electrical modulation integrated electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the surface plasmonic excitation and electrical modulation integrated device. Semiconductor substrate (101) Semiconductor active structure (102) Lower dielectric layer (103) Plasmon waveguide structure (104) Upper dielectric layer (106) Graphene structure (107) FET waveguide structure (108) Back electrode (110)