▎ 摘　　要

NOVELTY - Detector comprises a polymethyl methacrylate transparent protective layer spin coated on a front surface of a graphene transparent upper electrode. A graphene transparent upper electrode back and a layer of a platinum selenide are directly contact for collecting a photo-generated carrier. A silicon nano-column array structure is divided into two parts. An upper half part is periodically and densely arranged with the silicon nano-column array structure. A lower half part is a silicon substrate that is not etched. The silicon nano-column array structure is vertical to the silicon substrate. USE - Photoelectric detector based on PtSe2 and silicon nano-column array. ADVANTAGE - The photoelectric detector realizes the detection function of visible light to near infrared wave band. The silicon nano-column array structure enhances the absorption effect of the detector to the light, so that the detector is provided with high sensitivity, simple device structure and strong practicability. The performance of the device is improved, and has high popularization value. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the photoelectric detector based on PtSe2 and silicon nano-column array.