• 专利标题:   Preparation of heteroatom-doped layered graphene from boron carbide for e.g. transparent displays involves sonicating boron carbide and water, adding melamine, thermally treating, filtering, air-drying to form powder, and thermally treating.
  • 专利号:   IN201402354-I1
  • 发明人:   THARANGATTUNARAYANAN N, KUMAR P D, KUMAR P M
  • 专利权人:   COUNCIL SCI IND RES INDIA
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   IN201402354-I1 26 Feb 2016 C01B-031/04 201623 Pages: 20 English
  • 申请详细信息:   IN201402354-I1 INDE02354 20 Aug 2014
  • 优先权号:   INDE02354

▎ 摘  要

NOVELTY - A heteroatom-doped layered graphene is prepared by sonicating boron carbide (B4C) and water at molar ratio of 0.5-3 for 1 hour, adding melamine to mixture at ratio of 1:0.2-2 of melamine to B4C, stirring, thermally treating homogeneous solution at 80 degrees C for 6 hours, filtering, air-drying thermally treated solution at 50 degrees C for 12 hours to obtain powder, thermally treating powder or B4C powder at 1000-1600 degrees C in nitrogen (N2) gas atmosphere for 30-180 minutes, cooling after 30 minutes under N2 gas atmosphere, and separating product from unreacted B4C using water dispersion technique. USE - Preparation of heteroatom-doped layered graphene from boron carbide for electronic and electrochemical devices, such as transparent displays, dye sensitized solar cells, energy storage devices, such as super capacitors, batteries, and fuel cells (all claimed). Can also be used for fabrication of cathode materials and catalysts for various electrochemical processes. ADVANTAGE - The carbide-derived heteroatom-doped graphene shows good electrocatalytic performance in oxygen reduction reaction and follows an energy efficient four-electron transfer pathway. The preparation process is a single step method which results in high yield of high quality heteroatom-doped graphene. Electrodes developed using the method can reduce cost, energy consumption, and weight of electrochemical cells significantly.