▎ 摘　　要

NOVELTY - The method involves forming a first metal layer on a substrate (1). A second metal layer is arranged on a graphene (5). A photo-resist image is displayed on the second metal layer. An active area is provided with a source electrode (8). A gate and a drain electrode (9) are connected with a metal electrode. A photo resist cover is provided with a grid mask image through a grid image photo-resist. Corrosion liquid is removed from the second metal layer. A self-alignment unit is connected with a third metal layer (15). USE - Self-alignment based graphene transistor manufacturing method. ADVANTAGE - The method enables providing simple and easy manufacturing steps, effectively avoiding graphene pollution and scattering of substrates and increasing graphene transistor property. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a self-alignment based graphene transistor. Substrate (1) Graphene (5) Source electrode (8) Drain electrode (9) Third metal layer (15)