▎ 摘　　要

NOVELTY - The semiconductor structure has a via (140) which is located over the semiconductor substrate. A first dielectric layer (192) laterally surrounds the via. A first graphene layer extends along a top surface (112,130,150) of the via. A metal line is located over the via and is in contact with the first graphene layer. A second graphene layer peripherally encloses the metal line and the first graphene layer. The width of the first graphene layer is less than a width of the metal line when viewed in a cross section. The metal line extends past the first graphene layer. The second graphene layer is in contact with a top surface of the first dielectric layer. USE - Semiconductor structure. ADVANTAGE - The capping layers has an etch selectivity with respect to the lines such that additional liner layers and barrier layers are omitted and hence enhances the resistance and capacitance (RC) performance of the semiconductor device and reduces the fabrication cost. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of a semiconductor device. Semiconductor device (100) Top surfaces (112,130,150) Via (140) Barrier layer (170) First dielectric layer (192)