▎ 摘　　要

NOVELTY - Controlling the growth of graphene nanocrystalline carbon film by adjusting ECR ion irradiation density comprises vacuumizing the ECR plasma sputtering system by using ECR plasma sputtering system, then introducing argon gas into the ECR plasma sputtering system, setting the current value of the first magnetic coil in the ECR plasma sputtering system to 32 A, the current value of the second coil is 34 A and the current value of the third coil is 0-48 A, directing a magnetic field generated inside the ECR plasma sputtering system to introduce a certain power of microwave and magnetic field to generate a plasma, attracting the argon ions in the plasma to bombard the carbon target, releasing the carbon atoms in the carbon target into the plasma, attracting of the naphthalene ions in the plasma to ionize the surface of the substrate and varying the ion irradiation density from 1.88-26.89 mA/cm2 to grow a graphene nanocrystalline carbon film. USE - The method is useful for controlling the growth of graphene nanocrystalline carbon film by adjusting ECR ion irradiation density. ADVANTAGE - The obtained carbon film has: the average size of the graphene nanocrystal of 0.66-1.19 nm, the hardness of 6.45-14.63 GPa, the elastic modulus of 116.30-179.28 GPa, the friction coefficient of 0.07-0.38, the scratch depth of 2.78-6.36 nm and better mechanical and tribological properties.