▎ 摘　　要

NOVELTY - The laser has a epitaxial stack arranged on a surface of a substrate and provided with a negative type (N-type) distributed Bragg reflector (DBR) layer, a N-Type waveguide confinement layer, a quantum well, a positive type (P-type) wave-guide confinement layer, an oxide layer, a P-type DBR layer and an aluminum gallium arsenide layer. The oxide layer is formed with a dielectric hole. An electrode is laminated on a portion of a surface of the aluminum gallium arsenide layer. A graphene conductive film covers an exposed surface of an epitaxial laminate. A first insulating layer, a graphene film layer and a second insulating layer are stacked in sequence manner. The first insulating layer and the second insulating layer are directly stacked on the exposed surface of the epitaxial laminate. USE - VCSEL. ADVANTAGE - The laser reduces Joule heat to certain extent, thus achieving effect of lowering threshold and increasing gain, and stacks an electrode and a graphene conductive film on the aluminum gallium arsenide layer to increase lateral conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a vertical cavity surface emitting laser (VCSEL) forming method. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a VCSEL.