▎ 摘　　要

NOVELTY - The method involves using (1) light elliptical machine to measure the thickness of a substrate surface of composite silicon layer. A multilayer graphene sample is formed (2) on silicon substrate by a peeling off method or a mechanical method. The thickness of the substrate of composite silicon layer and the complex index of refraction rate of the graphene are obtained (4) from the intensity ratio of graphene layers in condition change relationship between the theoretical values. The theoretical values are compared with the test value to obtain multi-graphene layers of sample. USE - Method for detecting multi-layer graphene sample layer on composite silicon substrate. ADVANTAGE - The multi-layer graphene sample layer on composite silicon substrate is detected in a simpler manner. The universality of experiment test system is improved. The layer representation of hundred layers within multi-layer graphene sample is made efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for detecting multi-layer graphene sample layer on composite silicon substrate. (Drawing includes non-English language text) Step for using light elliptical machine to measure thickness of substrate surface of composite silicon layer (1) Step for forming multilayer graphene sample on silicon substrate by peeling off method or mechanical method (2) Step for using optical microscope to find needed multi-layer graphene sample area of composite silicon substrate surface (3) Step for obtaining thickness of substrate of composite silicon layer and complex index of refraction rate of graphene from intensity ratio of graphene layers (4)