▎ 摘　　要

NOVELTY - Controlling strain field of two-dimensional atomic layer materials involves preparing a nano light absorbing layer (3) and a silicon dioxide nano film (2) on a transparent substrate (4). Two-dimensional atomic layer material (1) is transferred to a surface of the silicon dioxide nanosheet. Focused laser beam is made to pass through the transparent substrate to irradiate the nano light absorbing layer to obtain a silica nano film. The complex strain field is applied to the two-dimensional atomic layer material by controlling the movement trajectory and energy density of the focused laser beam, and completing the control of the two-dimensional atomic layer material strain field. USE - Method for controlling strain field of two-dimensional atomic layer materials. ADVANTAGE - The method enables controlling strain field of two-dimensional atomic layer materials which is simple and efficient, green and environment-friendly, with wide application prospect in the strain regulation and device preparation of the two-dimensional atomic layer material. The method is finished by one-step laser direct writing, without any template, so as to realize the flexible control of super-large strain. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the method for controlling strain field of two-dimensional atomic layer materials. Two-dimensional atomic layer material (1) Silicon dioxide nano film (2) Nano light absorbing layer (3) Transparent substrate (4)