• 专利标题:   Method for producing graphene-based sensor, involves matching set of separating structures and tensile strength of graphene layer to one another such that graphene layer tears at separating structures during wet-chemical transfer.
  • 专利号:   DE102018214302-A1, US2020066845-A1, DE102018214302-B4
  • 发明人:   GLACER C, PINDL S, WITTMANN S, WEBER W
  • 专利权人:   INFINEON TECHNOLOGIES AG, INFINEON TECHNOLOGIES AG
  • 国际专利分类:   B81B007/02, B81C001/00, G01L007/00, H01L043/14, H04R019/04, H01L023/532, H01L029/16
  • 专利详细信息:   DE102018214302-A1 27 Feb 2020 B81C-001/00 202020 Pages: 31 German
  • 申请详细信息:   DE102018214302-A1 DE10214302 23 Aug 2018
  • 优先权号:   DE10214302

▎ 摘  要

NOVELTY - The method involves providing a carrier substrate (2) i.e. silicon substrate, and forming a support structure (3) on the carrier substrate such that a set of separating structures (5) is formed on an upper side (4) of the support structure. Wet chemical transfer of a graphene layer (6) to the upper side of the support structure with the set of separating structures is performed. The set of separating structures and a tensile strength of the graphene layer are matched to one another, such that the graphene layer tears at the separating structures during the wet-chemical transfer. USE - Method for producing a graphene-based sensor such as Hall sensor, microphone or pressure sensor. ADVANTAGE - The set of separating structures and the tensile strength of the graphene layer are matched to one another such that the graphene layer tears at the separating structures during the wet-chemical transfer, thus allowing to produce the graphene-based sensor in simple and economic manner without the need for the graphene layer in undesired areas, and hence avoiding undesired parasitic effects in the sensor, and increasing accuracy and sensitivity of the graphene-based sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional side view of a graphene based sensor during a manufacturing step. Carrier substrate (2) Support structure (3) Upper side (4) Separating structures (5) Graphene layer (6)