• 专利标题:   Method for manufacturing pellicle for extreme ultraviolet lithography, involves forming catalyst layer over silicon substrate, forming graphene layer over catalyst layer, and forming capping layer over side of graphene layer.
  • 专利号:   KR2022068457-A, KR2546968-B1
  • 发明人:   YU L, CHO S J, KIM K S, KIMCHUNG, SEO K, CHOI J H, MOON S Y, KIM J K
  • 专利权人:   FINE SEMITECH CORP
  • 国际专利分类:   G03F001/22, G03F001/62
  • 专利详细信息:   KR2022068457-A 26 May 2022 G03F-001/62 202247 Pages: 11
  • 申请详细信息:   KR2022068457-A KR155255 19 Nov 2020
  • 优先权号:   KR155255

▎ 摘  要

NOVELTY - The method involves forming a catalyst layer over a silicon substrate. A graphene layer is formed over the catalyst layer. A first capping layer is arranged over a first side of the graphene layer. The catalyst layer and the silicon substrate are removed to expose a second side opposite to the first side. A pellicle frame is arranged on the first capping layer, where thickness of the first capping layer and a second capping layer is thinned by etching an exposed portion. The first or second capping layers are made of silicon carbide, silicon dioxide, six-nitride, silicon chloride, silicon nitride, hexafluoride, boride or lanthanum carbide. A silicon oxide layer is laminated on the substrate. USE - Method for manufacturing a pellicle for extreme ultraviolet lithography. ADVANTAGE - The method enables effectively improving bonding force between the capping layer and the graphene layer, so that simplified process is performed. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for manufacturing the pellicle for extreme ultraviolet lithography (Drawing includes non-English language text).