▎ 摘　　要

NOVELTY - A memory device comprises a lower electrode, an electroactive intermediate layer and an upper electrode, where the electroactive intermediate layer is a graphene olefin quantum dot/polyaniline/gold nanoparticle/polyvinyl alcohol composite material has a thickness of 100-150 nm. USE - Memory device. ADVANTAGE - The memory device has improved transmission ability of carrier and better storage properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing memory device, which involves preparing a graphene quantum dot by utilizing a chemical method, adding 20-50 mg graphene quantum dots, 100 mu L aniline, 230 mg ammonium persulfate to 10-20 mL hydrochloric acid aqueous solution of pH 1, and stirring at 0-4 degrees C for 24-48 hours, centrifuging, washing and drying to obtain a graphene quantum dot/polyaniline composite material, adding 10-20 mg graphene quantum dot/polyaniline composite into 100 mL of water containing surfactant, adding 1-2 mL gold perchloric acid solution at a concentration of 10 mg/mL, and stirring at 0-4 degrees C for 1-2 hours, after centrifugation, washing and drying to obtain a graphene quantum dot/polyaniline/gold nanoparticle composite material, adding 20-40 mg graphene quantum dot/polyaniline/gold nanoparticle composite material into 10-30 mL aqueous solution of polyvinyl alcohol having a concentration of 10 mg/mL, and after ultrasonic dispersion for 1-3 hours, spin-coating the solution on the surface of lower electrode at a rotation speed of 2000-3000 rpm, obtaining metal aluminum having a thickness of 100-150 nm as an upper electrode material on the surface of the spin-coated lower electrode by utilizing thermal evaporation to obtain the finished product.