▎ 摘　　要

NOVELTY - The method involves forming (301) buried oxide layer and nickel layer on substrate comprising bulk silicon region. A seal impression nickel layer is provided (302) on fin structure to form fin structure of stamping nickel layer. The surface of graphene layer deposited on embossing layer is covered (304) by PMMA layer. The nickel layer is removed (305) by using hydrochloric acid wet scrubbing technique. PMMA layer is removed (306) by acid washing technique. The graphene layer is annealed to form a graphene layer fin structure on the buried oxide layer of the substrate. USE - Method for manufacturing fin structure of finned type field-effect transistor (FinFET). ADVANTAGE - As the heat cannot be released in heat energy mode by the fin structure, the working capacity of the FinFET can be increased. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for manufacturing fin structure of finned type field-effect transistor. (Drawing includes non-English language text) Step for forming buries oxide layer and nickel layer on substrate (301) Step for providing seal impression nickel layer on fin structure (302) Step for covering surface of graphene layer deposited on embossing layer (304) Step for removing nickel layer (305) Step for removing PMMA layer (306)