▎ 摘　　要

NOVELTY - A high-k gate medium preparing method involves preparing a metal thin film on surfaces of two layers or more than two layers of graphene, and introducing a dangling bond on the surface of the graphene. A metal thin film is removed by adopting a chemical corrosion method. The surface of the graphene is cleaned and dried. Water is utilized as an oxidizing agent, and a metal source is used for reaction. A metal oxide thin film is deposited on the surface of the graphene by using an atom layer depositing method, and adopting the metal oxide thin film as a high-k gate medium layer. USE - Method for preparing a high-k gate medium on a surface of a multi-layer graphene. ADVANTAGE - The method enables preparing the uniform and ultrathin high-k gate medium layer by the atom layer depositing method and by the effective introduction of dangling bond into a graphene crystal lattice. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a high-k gate medium on a surface of multi-layer graphene. '(Drawing includes non-English language text)'