• 专利标题:   One-pot fabrication process of porous heteroatom(s)-doped reduced graphene oxide by reduction of graphene oxide using natural biomolecule as reductant-dopant used for fabricating high voltage aqueous symmetric supercapacitor, involves adding graphene oxide to aqueous solution of biomolecule.
  • 专利号:   IN202211072704-A
  • 发明人:   AHMAD I, KUMAR A
  • 专利权人:   INDIAN INST TECHNOLOGY ROORKEE
  • 国际专利分类:   B82Y040/00, C01B032/184, C01B032/192, C01B032/198, C01B032/23
  • 专利详细信息:   IN202211072704-A 30 Dec 2022 C01B-032/23 202304 English
  • 申请详细信息:   IN202211072704-A IN11072704 15 Dec 2022
  • 优先权号:   IN11072704

▎ 摘  要

NOVELTY - One-pot fabrication process of porous heteroatom(s)-doped reduced graphene oxide (rGO) by reduction of graphene oxide (GO) using natural biomolecule(s) as reductant-dopant involves adding GO to the aqueous solution of biomolecule under stirring for 20 minutes to mix it thoroughly until the initially formed cotton-like light yellowish black precipitate to get fully dispersed, where the mass ratio of graphene oxide to biomolecule 1: (1-5), stirring the resulting mixture on a magnetic stirrer for 10-30 minutes, maintaining pH of the mixture in between 6-10 by adding dil.sodium hydroxide-perchloric acid, heating the above resultant on an oil bath at a temperature of 50-95℃ for a period from 8-16 hours till its color is changed from yellowish-black to dark black, centrifuging obtained black residue, and washing repeatedly with deionized water (DIW) till the unreacted precursor is removed and drying solid suspension under vacuum of 50-80℃ for 10-15 hours. USE - Method for one-pot fabrication process of porous heteroatom(s)-doped reduced graphene oxide (rGO) by reduction of graphene oxide (GO) using natural biomolecule(s) as reductant-dopant used for fabricating high voltage aqueous symmetric supercapacitor with workable mass-loading without using any binder/conducting agent exhibiting fairly high energy density. ADVANTAGE - The method has simple operation, and can accurately regulate the N/S doping amount and improve performances of heteroatom doped graphene. The porous heteroatom(s)-doped reduced graphene oxide has cost-effective, long life, and high conductivity, and has played a crucial role in the energy storage performance of these devices.