▎ 摘　　要

NOVELTY - The structure has a silicon carbide substrate (110) which comprises a surface including an oxide-free etched region and a silicon dioxide unetched region. A layer of material is formed on the non-oxide substrate material in the etched region. The layer has several particles which comprises diazonium molecule (150) and graphene molecule (160). A subset of particles is attached to the non-oxide substrate material exposed in the etched region. The subset of particles and the non-oxide substrate material are attached through diazonium molecules in the subset of particles. USE - Graphene heat dissipating structure of heat spreaders and heat sinks for power device, die level packaged integrated circuit and semiconductor-containing device. Can also be used in amplifier chip sets for radio frequency (RF) applications e.g. high power applications, complementary metal-oxide-semiconductors (CMOS) e.g. radiation hardened CMOS, silicon-based devices such as silicon-germanium (SiGe) devices, macro-scale lithium batteries, high power transformers and capacitor banks for various applications such as an industrial environment. ADVANTAGE - The size of the component is reduced, and the generation of heat from deleteriously affecting operation of the component is prevented, due to the high thermal conductivity of the graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a stage involved in forming a graphene containing layer. Substrate (110) Diazonium molecule (150) Graphene molecule (160) Profile (420) Open region (430)