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  • 专利标题:   Method of introducing bandgap in single layer graphite on silicate substrate used for nanocircuit design, involves preparing graphene flakes and chemical vapor deposition grown graphene films and performing hydrogenation of graphene.
  • 专利号:   US2014080295-A1, US9312130-B2
  • 发明人:   BALDWIN J W, MATIS B R, BURGESS J S, BULATJARA F, FRIEDMAN A L, HOUSTON B H
  • 专利权人:   US SEC OF NAVY, US SEC OF NAVY
  • 国际专利分类:   H01B013/30, H01B005/14, H01L021/02, H01L021/223, H01L029/16
  • 专利详细信息:   US2014080295-A1 20 Mar 2014 H01L-021/02 201425 Pages: 10 English
  • 申请详细信息:   US2014080295-A1 US942257 15 Jul 2013
  • 优先权号:   US701029P, US942257

▎ 摘　　要

NOVELTY - Graphene flakes and chemical vapor deposition grown graphene films are prepared on silicate substrate and hydrogenation of graphene is performed to introduce bandgap in single layer graphite. USE - Method of introducing bandgap in single layer graphite on silicate substrate is used for nanocircuit design in graphene-based system. ADVANTAGE - The method of introducing bandgap provides tunable and reversible larger bandgap. The method avoids the need of high quality dielectrics that are difficult to grow on graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) graphene compound; and (2) method of hydrogenating graphene.