▎ 摘　　要

NOVELTY - Preparing a magnetic ion gel thin film gated graphene field-effect transistor, comprises (i) using photoresist, exposing electrode pattern, developing, and fixing on a silicon substrate, depositing titanium/gold metal layers by vapor deposition, (ii) preparing standard graphene samples, and transferring graphene onto the silicon substrate with the metal electrodes using a transfer platform, (iii) preparing magnetic ion gel gate dielectric graphene field-effect transistor, preparing a magnetic ion gel thin film and cutting to fit onto the silicon substrate with the metal electrodes. USE - Preparation method of magnetic ion gel film grid graphene field effect tube used in two-dimensional material device, dielectric material field. ADVANTAGE - The magnetic ion-gel film prepared by the method is uniform and controllable in thickness, capable of providing strong and effective carrier control capability, and simplifying the preparation process. The method has strong field effect, high integration, high success rate of field effect tube lacks the technical problem of high efficiency simple solution. Because the magnetic ion gel spin coated on the silicon sheet, the film can be effectively stored and subsequent repeated use. Good stretchability and good mechanical stability of the gel film solves the problem that the liquid is easy to overflow. The whole preparation process is very efficient and simple and easy to operate.