▎ 摘　　要

NOVELTY - A graphene field effect transistor manufacturing method involves providing a silicon substrate, forming an insulating layer on the silicon substrate and prepared back contact source, forming leakage electrode on the insulation layer, transferring graphene form the source, providing a leakage pattern to form a suspension of graphene channel, patterning graphene channel, preparing graphene on contact source and leakage electrode, and forming graphene-based channel material on dual-gate field-effect transistor in dual contact air gap, where the graphene is gate dielectric and gate electrode. USE - Method for manufacturing graphene field effect transistor. ADVANTAGE - The method enables manufacturing graphene field effect transistor with reduced contact resistance between metal and graphene and increased mobility of graphene.