▎ 摘　　要

NOVELTY - The method involves forming a manual defect hole on graphene. Anisotropic etching is performed on the graphene by utilizing hydrogen-containing plasma. The hole is arranged in a triangular or rectangular shaped lattice diagram. The hole is formed by photo etching, nano pressing, mechanical impacting and laser scanning. The hydrogen-containing plasma is applied to the graphene during anisotropic etching such that the hole is gradually increased until needed pattern is formed, where reaction temperature ranges from room temperature to 520 degrees centigrade. USE - Method for processing graphene nano pattern. ADVANTAGE - The method enables controllably processing a graphene nano structure with precision up to ten nanometres. The method enables obtaining the graphene nano structure with a zigzag edge structure with smooth atom level. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for processing graphene nano pattern.'(Drawing includes non-English language text)'