• 专利标题:   Graphene nano wall comprises substrate, graphene wall array, and several graphene walls diverging arrays.
  • 专利号:   CN105489394-A, CN105489394-B
  • 发明人:   CHEN J, HAO Y, WANG T
  • 专利权人:   GUANGZHOU MOCHU NEW MATERIAL TECHNOLOGY, GUANGZHOU MOXI TECHNOLOGY CO LTD
  • 国际专利分类:   C23C016/26, C23C016/513, H01G011/24, H01G011/26, H01G011/36, H01G011/86
  • 专利详细信息:   CN105489394-A 13 Apr 2016 H01G-011/36 201646 Pages: 13 English
  • 申请详细信息:   CN105489394-A CN11030219 30 Dec 2015
  • 优先权号:   CN11030219

▎ 摘  要

NOVELTY - Graphene nano wall comprises substrate, graphene wall array, and several graphene walls diverging arrays. The graphene wall array comprises graphene sheets perpendicular to length in substrate. The graphene walls diverging arrays are branched on one side or both sides of graphite sheets arrays. USE - Graphene nano wall. ADVANTAGE - The graphene nano wall does not have agglomeration between stacked graphene layers, thus suitable for subsequent preparation of supercapacitor. It has increased dispersion of graphene sheet nanoparticles. It has increased capacitance and conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation graphene nano wall by performing plasma enhanced chemical vapor deposition on long wall graphene arrays using carbon-containing plasma gas as carbon source precursors; and growing graphene wall array on silicon copper, nickel, or silica substrate, while adding oxygen, argon, nitrogen, ammonia, or water to plasma precursor of plasma bombardment and doping oxygen, nitrogen, or hydroxide groups, in which plasma precursor gas flowrate is 1-20% of carbon precursor gas flow. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of graphene nano wall.