▎ 摘　　要

NOVELTY - Plasma enhanced chemical vapor deposition method comprises loading a wafer with a magnetic layer into a processing chamber equipped with a radio frequency system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on a radio frequency source of the radio frequency system to decompose the aromatic hydrocarbon precursor into multiple active radicals at frequency greater than about 1000 Hz to form a graphene layer on the magnetic layer. USE - The method is useful for plasma enhanced chemical vapor deposition, which is used in semiconductor structure. ADVANTAGE - The plasma enhanced chemical vapor deposition method provides semiconductor structure with high magnetic conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing semiconductor structure; and (2) semiconductor structure.