• 专利标题:   Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.
  • 专利号:   CN114530367-A, US2022238332-A1, TW202229633-A
  • 发明人:   WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, UNIV TAIWAN NAT, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, UNIV TAIWAN NAT
  • 国际专利分类:   H01L021/02, H01L021/74, H01L029/78, H01L021/321, H01L029/16, C01B032/182, C23C016/455, C23C016/48, H05H001/46
  • 专利详细信息:   CN114530367-A 24 May 2022 H01L-021/02 202258 Chinese
  • 申请详细信息:   CN114530367-A CN10038269 13 Jan 2022
  • 优先权号:   US142536P, US313379

▎ 摘  要

NOVELTY - Plasma enhanced chemical vapor deposition method comprises loading a wafer with a magnetic layer into a processing chamber equipped with a radio frequency system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on a radio frequency source of the radio frequency system to decompose the aromatic hydrocarbon precursor into multiple active radicals at frequency greater than about 1000 Hz to form a graphene layer on the magnetic layer. USE - The method is useful for plasma enhanced chemical vapor deposition, which is used in semiconductor structure. ADVANTAGE - The plasma enhanced chemical vapor deposition method provides semiconductor structure with high magnetic conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing semiconductor structure; and (2) semiconductor structure.