▎ 摘　　要

NOVELTY - The sensor has a substrate, an electrode and a piezoelectric material. The upper surface of the piezoelectric material is formed with a quantum dot film. The quantum dot film can respond to the infrared light irradiation to accelerate the temperature rise of the piezoelectric material. The quantum dot material forming the quantum dot film includes tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride or its alloyed quantum dots. The alloyed quantum dots include PbxSn1-xTe, PbxSn1-xSe, InAsxSb1-x and HgxCd1-xTe, where x represents the percentage of the number of ions in each alloyed quantum dot. The piezoelectric material is quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramics, zinc oxide or lithium niobate. The electrode is titanium, gold, aluminum, platinum or graphene. The substrate is a silicon substrate. USE - Piezoelectric resonant infrared sensor i.e. photon-type detector and heat detector is useful for array (claimed) and in military and civil use. ADVANTAGE - The sensor improves the detection rate to infrared light, reduces the noise, and realizes the accurate detection of the wavelength of the infrared light. The quantum dot film has excellent photo-thermal conversion performance, self temperature rise quickly, and the temperature of the material is quickly increased by heat conduction, thus the temperature difference is increased, so as to improve the sensitivity of the sensor and reduce the noise. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing piezoelectric resonant infrared sensor.