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  • 专利标题:   Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.
  • 专利号:   US2023079680-A1, KR2023040135-A
  • 发明人:   LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S
  • 专利权人:   UNIV SEOUL NAT R DB FOUND, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B032/186, C01B032/188, H01L029/40, H01L029/41, H01L021/285, C23C016/04, C23C016/26, C23C016/505, C23C016/511, H01L021/768, H01L021/8234
  • 专利详细信息:   US2023079680-A1 16 Mar 2023 C01B-032/186 202325 English
  • 申请详细信息:   US2023079680-A1 US829679 01 Jun 2022
  • 优先权号:   KR123368

▎ 摘　　要

NOVELTY - Manufacturing wiring involves growing a graphene layer on a substrate using a plasma of a hydrocarbon at 200-600 °C by plasma enhanced chemical vapor deposition (PECVD); and doping the graphene layer with a metal. USE - Method for manufacturing a wiring used in electronic device (claimed). ADVANTAGE - The graphene layer is doped with a metal in various manners to decrease the resistance of wiring, so that low-resistance wiring can be provided in small devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a wiring comprising: a substrate; and (2) an electronic device comprising: the wiring.