▎ 摘　　要

NOVELTY - The device (10) has a transistor (11) that is provided in a first region of an amorphous substrate (500). An LED (12) is provided in a second region different from the first region of the amorphous substrate. Each of the transistor and the LED includes a first semiconductor layer (120, 220) over the conductive alignment layer (110, 210), and a second semiconductor layer (130, 230) over the first semiconductor layer. The first semiconductor layer and second semiconductor layer are the same layers as conductive alignment layer. The first semiconductor layer is in contact with the second semiconductor layer in the transistor, and a light-emitting layer (260) is provided between the first semiconductor layer and the second semiconductor layer in the LED. The display device is selected from titanium, aluminum, graphene and zinc oxide. The first semiconductor film contains gallium nitride. USE - Display device such as micro LED display device and mini LED display device. ADVANTAGE - The display device is manufactured at low cost, and the manufacturing cost is suppressed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of display device. 10Display device 11Transistor 12LED 110,210Conductive alignment layers 120,220First semiconductor layers 130,230Second semiconductor layers 260Light emitting layer 500Amorphous substrate