• 专利标题:   Graphene based microbolometer comprises thin film of graphene nanoribbon deposited on substrate between electrical contacts, where thin film of graphene nanoribbon is tuned to be sensitive to Infrared radiation; and conductive terminals.
  • 专利号:   US10937914-B1
  • 发明人:   EGERTON E J, SOOD A K
  • 专利权人:   MAGNOLIA OPTICAL TECHNOLOGIES INC
  • 国际专利分类:   G01J005/04, G01J005/08, G01J005/20, G01J005/22, G01J005/24, H01L029/16, H01L031/028, H01L031/08, H01L031/101, H01L031/112
  • 专利详细信息:   US10937914-B1 02 Mar 2021 H01L-031/028 202122 English
  • 申请详细信息:   US10937914-B1 US417592 20 May 2019
  • 优先权号:   US638243P, US417592

▎ 摘  要

NOVELTY - Graphene based microbolometer comprises a thin film (120) of graphene nanoribbon deposited on a substrate (101) between electrical contacts, where the thin film of graphene nanoribbon is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1-12 microns; first and second conductive terminals in electrical communication with the thin film of graphene nanoribbon; and where the thin film of graphene nanoribbon is tuned such that exposure of IR radiation induces a change in impedance between the first and second conductive terminals which is sensed by CMOS readout circuitry; where the thin film of graphene nanoribbon is tuned to increase the sensitivity of the detector by exposing the graphene nanoribbon to an oxidation environment, which increases the thermal coefficient of resistance (TCR) to excess of 4% per degree centigrade and up to 6% per degree centigrade, and resulting in a Noise Equivalent Delta Temperature (NEDT) of less than 10 mK. USE - As graphene based microbolometer. ADVANTAGE - The microbolometer detects light by resistance changes in the fabric due to heating and provides enhanced overall sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene based IR detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the microbolometer detecting element according to an embodiment employing a graphene sensing element fabricated on a generic CMOS wafer process. Infrared detector (100) Substrate (101) Film (120) Infrared sensor (130)