▎ 摘　　要

NOVELTY - Growing nitride epitaxial wafer comprises polishing copper substrate, cleaning, forming graphene layer, transferring graphene layer to target substrate, growing aluminum nitride layer on graphene layer by atomic layer deposition, and growing gallium nitride layer on aluminum nitride layer by metal organic chemical vapor deposition. USE - Method for growing nitride epitaxial wafer used for gallium nitride-based lasers (claimed). ADVANTAGE - The method is precise, and has high product quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for gallium nitride-based lasers comprising graphene layer, target substrate, aluminum nitride layer, gallium nitride buffer layer, N-type gallium nitride layer, N-type cladding layer, N-type waveguide layer, active region quantum well layer, P-type waveguide layer, P-type cladding layer, and P-type gallium nitride layer.