▎ 摘　　要

NOVELTY - Epitaxial growth of graphene at sapphire and epitaxial metal interface, comprises processing sapphire wafer substrate, plating the substrate on metal catalyst, in-situ annealing and recrystallizing to obtain epitaxial growth metal catalyst thin film, placing thin film substrate in a chemical vapor deposition furnace, introducing protective gas and heating, introducing carbon source gas and carrier gas, allowing the carbon atom to penetrate at the interface of the metal catalyst thin film and the sapphire substrate, growing graphene, cooling and removing metal catalyst thin film. USE - The method is useful for epitaxial growth of graphene at sapphire and epitaxial metal interface (claimed). ADVANTAGE - The method utilizes high catalytic activity metal catalyst, reduces processing temperature, improves graphitization degree and produces good quality graphene. DETAILED DESCRIPTION - Epitaxial growth of graphene at sapphire and epitaxial metal interface, comprises (i) oxygen plasma bombarding sapphire wafer substrate for 10 minutes, adding the substrate into sulfuric acid-hydrogen peroxide solution, boiling at 100 degrees C for 30 minutes, placing the substrate in deionized water, ultrasonic cleaning for 10-30 minutes, removing from deionized water, drying using nitrogen with purity of 99.999%, placing the substrate into a vacuum oven, heating to 80 degrees C and drying for 30 minutes, (ii) plating the substrate on 200 nm to 1 mu m thickness metal catalyst by evaporation or sputtering method, in-situ annealing and recrystallizing to obtain epitaxial growth metal catalyst thin film, (iii) placing the metal catalyst thin film substrate in a cavity of a chemical vapor deposition (CVD) furnace, introducing protective gas and heating to growth temperature, (iv) introducing carbon source gas and carrier gas into the CVD furnace cavity, allowing the carbon atom to penetrate at the interface of the metal catalyst thin film and the sapphire substrate at high temperature, nucleating at the interface of the metal catalyst thin film and sapphire, and growing graphene, (v) cooling to room temperature and removing wafer from the graphene, (vi) removing metal catalyst thin film of graphene using oxygen plasma, then removing metal catalyst thin film using metal etching, and cleaning using hydrochloric acid and deionized water to remove residual metal ions.