• 专利标题:   Method for fabricating nanowire and graphene- sheet hybrid structure of transparent electrode, involves dipping substrate in graphene sheet dispersed solution, and performing thermal treatment to remove surface between line patterns.
  • 专利号:   US2015200031-A1, KR2015085557-A
  • 发明人:   YOUN D H, CHOI C G, KIM J S, YU Y J, CHOI J S, CHOI H K
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C23C028/00, C23C004/00, C23C004/12, C23C004/18, H01B001/02, H01B013/00, H01B005/14
  • 专利详细信息:   US2015200031-A1 16 Jul 2015 H01B-001/02 201548 Pages: 12 English
  • 申请详细信息:   US2015200031-A1 US333002 16 Jul 2014
  • 优先权号:   KR005154

▎ 摘  要

NOVELTY - The method involves preparing a mixed solution of a nanowire material and a polymer material. A nanowire line pattern is formed by spraying the mixed solution to a grounded substrate by an electro-spinning method. A substrate is dipped in a graphene sheet dispersed solution in which the nanowire line pattern is formed. A thermal treatment is performed to remove an interfacial surface between the nanowire line patterns. A line width in the nanowire line pattern is about 10-90 micrometer. USE - Method for fabricating a nanowire and graphene- sheet hybrid structure of a transparent electrode. ADVANTAGE - The method enables decreasing distance between the nanowires that are aligned within the pattern by adjusting the line width in the nanowire line pattern to lower, thus improving efficiency of crosslinking between the nanowires and improving conductive property. The method enables allowing the graphene sheet to cover surface of the nanowires to exhibit an effect of preventing oxidation of the nanowires during the thermal treatment process, thus preventing the conductive property from deteriorating due to the oxidation of the nanowires. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a nanowire and graphene-sheet hybrid structure. DESCRIPTION OF DRAWING(S) - The drawing shows a graph representing a relation between current and bias voltage.