▎ 摘　　要

NOVELTY - Preparing P-type semiconductor graphene involves cleaning specific substrate, drying on reaction table, then vacuumizing and introducing argon protection gas. The treated product is subjected to microwave to adjust first reaction power in microwave emitter, temperature is raised to first reaction temperature, and flow rate of reaction chamber pressure is adjusted. The hydrogen and methane are introduced, and reacted for 0.1-20 minute to form graphene film. The filling is mixed with certain concentration of boron source gas and mixed gas of hydrogen. The total flow rate of mixed gas is regulated and reaction temperature is controlled. The microwave emitting power is adjusted to power second reaction and reacted for 0.5-30 minutes to obtain boron-doped P-type semiconductor graphene. The methane and hydrogen are closed in microwave emitter. The argon gas is continuously infused under certain annealing temperature. USE - Method for preparing P-type semiconductor graphene. ADVANTAGE - The method enables to prepare P-type semiconductor graphene that has high quality and large-scale industrial application, and in eco-friendly manner. DETAILED DESCRIPTION - The cooling time is 10-300 minutes, then naturally cooled until reaction chamber drops to room temperature.