▎ 摘　　要

NOVELTY - Method for growing graphene on hexagonal silicon carbide silicon surface involves polishing hexagonal silicon carbide wafer, cutting, cleaning, placing the product in a chemical vapor deposition furnace chamber, etching the wafer, cooling, obtaining a silicon carbide substrate, depositing a metal substrate on the silicon carbide substrate, obtaining a composite substrate, growing graphene on the resultant product by supplying an external carbon source, cooling, removing metal nickel on the surface of silicon carbide wafer, cleaning the water and drying. USE - Method for growing graphene on hexagonal silicon carbide silicon surface used in preparation of graphene single crystal. ADVANTAGE - The method enables growing of high-quality graphene on hexagonal silicon carbide silicon surface by metal-assisted internal and external carbon source bonding by avoiding destruction of graphene during transfer of chemical vapor deposition method and weakening influence of substrate buffer layer. The method provides graphene single crystal having large-size and high-quality. DETAILED DESCRIPTION - Method for growing graphene on hexagonal silicon carbide (6H/4H-SiC) silicon surface by metal-assisted internal and external carbon source bonding involves polishing hexagonal silicon carbide wafer, cutting, cleaning to obtain hexagonal silicon carbide wafer having a thickness of 300-400 mu m, placing the resultant product in a chemical vapor deposition furnace chamber with the silicon face facing upward, providing a vacuum of (1-3)x 10-4 Pa, heating to 1200-1300 degrees C, heat-preserving for 5-20 minutes, providing high-purity argon and high-purity hydrogen to the reaction chamber, controlling pressure to 100-300 mbar, heating to 1450-1650 degrees C, etching the wafer with hydrogen for 10-60 minutes, cooling to room temperature, obtaining a silicon carbide substrate, depositing a metal substrate having a thickness of 100-800 nm on the silicon carbide substrate, obtaining a hexagonal silicon carbide wafer/nickel composite substrate, placing the resultant product in a chemical vapor deposition furnace chamber with the silicon face facing upward, supplying an external carbon source, heating to 1350-1550 degrees C in an argon atmosphere, controlling pressure to 100-300 mbar, heat-preserving for 10-30 minutes, growing graphene, providing an argon atmosphere, rapidly cooling to 800-900 degrees C, naturally cooling to room temperature, obtaining hexagonal silicon carbide wafer/nickel composite substrate on which graphene is grown, placing the resultant product in a mixed solution of ferric chloride and hydrochloric acid or nitric acid, removing metal nickel on the surface of silicon carbide wafer by stirring, cleaning the water with alcohol and drying.