▎ 摘　　要

NOVELTY - The method involves forming a graphene-derived material layer on a substrate (100). A compound semiconductor layer is connected to the graphene-derived material layer. Another compound semiconductor layer is provided with a monolayer. A graphene layer is arranged on an oxidation graphene layer (110). An optic process equipment is arranged on the oxidation graphene layer. Another graphene-derived material layer is formed on another substrate. A buffer layer is formed on the former substrate. A gallium nitride layer is deposited on the buffer layer. USE - Method for manufacturing a compound semiconductor. ADVANTAGE - The method enables improving luminous efficiency of a light emitting device and controlling tension between the substrate and compound semiconductor layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a compound semiconductor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a compound semiconductor. Substrate (100) Oxidation graphene layer (110)