▎ 摘　　要

NOVELTY - Using graphene field-effect transistor as reconfigurable circuit involves depositing a liquid dielectric over a graphene channel of the graphene field-effect transistor (GFET), applying an activation energy via a first electric field across the liquid dielectric and the graphene channel to electrochemically produce chemical species within the liquid dielectric such that the chemical species accumulate at, and molecularly bond with, the graphene channel to decrease a conductivity of the graphene channel, and applying a deactivation energy via a second electric field of opposite polarity to the first electric field to remove interaction between the chemical species and the graphene channel to increase the conductivity of the graphene channel. USE - Method for using graphene field-effect transistor as reconfigurable circuit. ADVANTAGE - The electrical conductance of the graphene channel such that the graphene field-effect transistor exhibits ON-OFF ratios larger than 10 4 with OFF-resistances as high as 10 megaohms to enable reversible programming of the electrical conductance of the graphene channel. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. a method for providing a reconfigurable graphene circuit, which involves: (a) depositing a liquid dielectric over a graphene channel of GFET; (b) applying a voltage bias across the liquid dielectric and the graphene channel that is sufficient to electrochemically produce ions within the liquid dielectric; (c) applying continuously the voltage bias for a period of time until an electrical double layer (EDL) at a graphene-dielectric interface is strong enough to separate the electrochemically-produced ion based on their polarity and to provide necessary molecular activation and deactivation energies to form weak, reversible molecular bonds between the produced ion and the graphene channel; and(d) using the reversible molecular bonds to dynamically set a degree of electrical conductance of the graphene channel such that the GFET exhibits ON-OFF ratios larger than 104 with OFF-resistances as high as 10 megaohms to enable reversible programming of the electrical conductance of the graphene channel; and 2.a reconfigurable graphene field-effect transistor (GFET), which comprises: a graphene channel arranged between source electrode (20)and drain electrode (22), a liquid dielectric arranged on top of the graphene channel, and a gate electrode arranged on the liquid dielectric, where a surface area of the gate electrode is at least as large as 75% of the surface area of the graphene channel such that when a controlled voltage bias is applied to the gate electrode (18) electrochemical reactions are induced within the liquid dielectric and portions of the graphene channel changing a majority of the graphene into an ion-bonded material and forming a uniform electrical double layer at a graphene-dielectric interface (24). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene field-effect transistor as reconfigurable circuit Gate electrode (18) Source electrode (20) Drain electrode (22) Graphene-dielectric interface (24) Graphene surface (34)