• 专利标题:   Carbon abrasive used to polish slurry, and manufacture semiconductor device contains carbon nanoparticle, and positively charged polymer, and/or positively charged oligomer disposed on surface of carbon nanoparticle.
  • 专利号:   US2021071035-A1, JP2021042377-A, KR2021031328-A, CN112480867-A, EP3792321-A1
  • 发明人:   TAKAI K, KIM D Y, KIM D
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C09G001/02, C09K003/14, H01L021/3105, H01L021/321, B24B037/00, H01L021/304, B24B037/04, C08K009/08, H01L021/02
  • 专利详细信息:   US2021071035-A1 11 Mar 2021 C09G-001/02 202137 English
  • 申请详细信息:   US2021071035-A1 US884089 27 May 2020
  • 优先权号:   KR113140

▎ 摘  要

NOVELTY - Carbon abrasive comprises a carbon nanoparticle, and a positively charged polymer, and/or a positively charged oligomer disposed on a surface of the carbon nanoparticle. USE - The carbon abrasive is useful for: polishing slurry; manufacturing a semiconductor device (all claimed). ADVANTAGE - The carbon abrasive: exhibits a positive charge in water; and improves a polishing rate while reducing damage and shape deformation of a structure. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a polishing slurry comprising the carbon abrasive; and (2) manufacturing a semiconductor device, comprising forming a first layer (20) comprising a first material on a substrate (10), forming many trenches in the first layer, forming a second layer (30a) comprising a second material on the first layer and inside the trenches, where the second material is different from the first material, and chemical mechanical polishing a surface of the second layer using the polishing slurry. DESCRIPTION OF DRAWING(S) - The figure shows a planarization of the second layer. Substrate (10) First layer (20) Second layer (30a)