• 专利标题:   Graphene device, preferably inverter, includes upper oxide layer on embedded gates, and graphene channel and electrodes on upper oxide layer.
  • 专利号:   US2012075008-A1, US8487356-B2
  • 发明人:   HEO J S, SEO S, KIM D, WOO Y, CHUNG H
  • 专利权人:   HEO J S, SEO S, KIM D, WOO Y, CHUNG H, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/336, H01L029/12, H03K003/01, H01L021/00, H01L021/78, H01L029/778
  • 专利详细信息:   US2012075008-A1 29 Mar 2012 H03K-003/01 201224 Pages: 10 English
  • 申请详细信息:   US2012075008-A1 US307370 30 Nov 2011
  • 优先权号:   KR098778

▎ 摘  要

NOVELTY - A graphene device comprises embedded gates on a substrate (20); an upper oxide layer (28) on the embedded gates; and a graphene channel (30) and electrodes (32, 34) on the upper oxide layer. USE - A graphene device, preferably an inverter (claimed). ADVANTAGE - The graphene device may be manufactured using a relatively simple process that facilitates operation control and does not affect the properties of the graphene device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) manufacturing the graphene device; and (2) operating the graphene device comprising providing graphene channel and electrodes on embedded gates and at least one metal pattern (24A-C)between the electrodes; and applying different voltages to at least two of the electrodes and the metal pattern, respectively. The voltage applied to one of the electrodes is a VDD voltage and the voltage applied to another of the electrodes is a ground voltage. The substrate includes a semiconductor substrate and an oxide layer which are sequentially stacked. DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view illustrating the graphene device. Substrate (20) Metal pattern (24A-C) Upper oxide layer (28) Graphene channel (30) Electrodes (32, 34)