• 专利标题:   Graphene-based infrared absorber layer used for manufacturing infrared detector, consists of thermosensitive layer, graphene film provided on thermosensitive layer, and silicon nitride film provided below thermosensitive layer.
  • 专利号:   CN106206830-A, CN106206830-B
  • 发明人:   ZHOU D, WEI X, FENG S, SHEN J, YANG J, SHI H, DU C
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL, CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   H01L031/101, H01L031/18
  • 专利详细信息:   CN106206830-A 07 Dec 2016 H01L-031/101 201709 Pages: 7 Chinese
  • 申请详细信息:   CN106206830-A CN10566175 19 Jul 2016
  • 优先权号:   CN10566175

▎ 摘  要

NOVELTY - A graphene-based infrared absorber layer consists of a thermosensitive layer, a graphene film provided on the thermosensitive layer, and a silicon nitride film provided below the thermosensitive layer. USE - Graphene-based infrared absorber layer used for manufacturing infrared detector (all claimed). ADVANTAGE - The graphene-based infrared absorber layer has excellent greenhouse effect due to use of thermosensitive layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) infrared detector, which consists of a substrate with a readout circuit, the graphene-based infrared absorber layer, and a reflective layer; and (2) manufacture of infrared detector.