• 专利标题:   Manufacture of silicon carbide material for forming e.g. ceramic matrix composite, involves reacting carbon material and silicon-containing gas in reaction chamber at preset temperature and pressure, and maintaining partial pressure.
  • 专利号:   US10954167-B1
  • 发明人:   GRIFFITH G W, GARNIER J E
  • 专利权人:   ADVANCED CERAMIC FIBERS LLC
  • 国际专利分类:   B82Y030/00, C01B032/956, C04B035/565, C04B035/571, C04B035/573, C04B035/622, C04B035/80
  • 专利详细信息:   US10954167-B1 23 Mar 2021 C04B-035/565 202144 English
  • 申请详细信息:   US10954167-B1 US261246 29 Jan 2019
  • 优先权号:   US901309, US261246

▎ 摘  要

NOVELTY - Production of silicon carbide material (12) involves reacting a carbon material (4) and a silicon-containing gas (2) in a reaction chamber at an elevated temperature of up to 2400degrees Celsius and a pressure of about atmosphere, and maintaining a partial pressure of oxygen in the reaction chamber of 1.01x102 Pa or less to produce silicon carbide nanoparticles. USE - Manufacture of silicon carbide material such as ~a-silicon carbide for forming ceramic matrix composite, metal matrix composite and polymer matrix composite for industrial areas, military areas, nuclear areas, electrical areas, and aerospace areas. ADVANTAGE - The method is simple and inexpensive, and enables manufacture of silicon carbide material with excellent thermal efficiency, thermal conductivity, and mechanical stability. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of reaction chamber. Silicon-containing gas (2) Carbon material (4) Carrier gas (6) Reaction zone (8) Silicon carbide material (12)