1. 平台首页
  2. 国际专利信息
  • 专利标题:   Apparatus for doping graphene or carbon nanotube thin-film field-effect transistor device, has thin-film field-effect transistor device on substrate, and contact metal on doped channel region of transistor device.
  • 专利号:   US2013134392-A1, WO2013081853-A2, US8772910-B2, CN103946964-A, WO2013081853-A3, CN103946964-B
  • 发明人:   AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, BHUPESH C
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/336, H01L029/167, H01L021/02, H01L029/06
  • 专利详细信息:   US2013134392-A1 30 May 2013 H01L-021/336 201338 Pages: 14 English
  • 申请详细信息:   US2013134392-A1 US306357 29 Nov 2011
  • 优先权号:   US306357

▎ 摘　　要

NOVELTY - A graphene or carbon nanotube thin-film field-effect transistor device-doping apparatus has a graphene or carbon nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, and contact metal disposed on doped channel region of graphene or carbon nanotube thin-film field-effect transistor device. The channel region is doped with a dopant. USE - Apparatus is used for doping graphene or carbon nanotube thin-film field-effect transistor device e.g. dual-gate carbon nanotube thin-film field-effect transistor device for liquid crystal display device and organic-light-emitting-diode display device. ADVANTAGE - The apparatus enables manufacture of graphene or carbon nanotube thin-film field-effect transistor device having improved electronic mobility, by doping channel region with dopant. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the dual-gate carbon nanotube thin-film field-effect transistor device. Gate (100) Gate dielectric (120) Nano component (140) Metal portions (162,164) Doped regions (502,504)