▎ 摘　　要

NOVELTY - A nitride semiconductor surface modification method comprises putting nitride semiconductor substrate into plasma generator, heating at 20 degrees C/minute, raising the temperature to 600-800 degrees C, taking hydrogen as plasma working gas to substrate, taking methane as reaction gas, directly growing vertical structure graphene on nitride semiconductor, depositing for 30-400 minutes, and cooling to room temperature at cooling rate of 2-4 degrees C/minute to obtain nitride semiconductor surface modification. USE - Nitride semiconductor surface modification method. ADVANTAGE - The method is simple, has strong controllability. It does not only affect nitride semiconductor material with excellent performance, but also additional surface self-cleaning ability.