▎ 摘　　要

NOVELTY - The structure has a multilayer graphene formed on an insulating film, where the multilayer graphene includes a set of graphene crystals with a zigzag direction oriented at 17 degrees or less with respect to an electric conduction direction. The multilayer graphene is a laminate of a set of strip-shaped graphene sheets. A cyclic structure of a five-membered ring or a seven-membered ring in the graphene crystals, where average particle diameter of the graphene crystals is larger than the width of the multilayer graphene. USE - Graphene wiring structure for use in a semiconductor device (claimed). ADVANTAGE - The multilayer graphene is relatively low resistance wiring within a range in which control of the crystal orientation is easy. The structure has a more specific configuration in which the low resistance multilayer graphene can be connected to an external element. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene wiring structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene wiring structure. Memory film (MM) Substrate (S) Source line (SL) Silicon pillar (SP) Semiconductor device (40)