▎ 摘　　要

NOVELTY - The structure (20) has a metal interconnect (230) provided with a bottom surface, a first side, a second side opposite the first side and a top surface. The bottom surface, the first side and the second side of the metal interconnect are surrounded by a dielectric layer (103). A graphene layer is formed on the top surface of the metal interconnect. A metal bonding layer provides interfacial bonding between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material. The dielectric layer is made of material that is selected from a group consist of silicon, hydrogen, oxygen, carbon and nitrogen. USE - Interconnect structure for an electronic device (claimed). ADVANTAGE - The structure enhances adhesion between the graphene layer and the metal interconnect so as to control electro-migration of the metal interconnect, so that capacitance of a line can be reduced when thickness of the metal interconnect is decreased and speed of signal passing through the interconnect can be increased. The structure rapidly increases resistance when width or thickness of the metal interconnect is decreased, so that electro migration failure time of the metal interconnect can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an interconnect structure. Capacitor (10a) Substrate (11) Gate electrode (14) Channel (17) Interconnect structure (20) Dielectric layers (103, 210) Metal interconnect (230)