▎ 摘　　要

NOVELTY - Semiconductor structure (100) has a substrate (110), a via (120) penetrating through the substrate, a liner layer (130) formed on a sidewall of the via, a barrier layer (140) comprising a conductive two-dimensional material and formed on the liner layer, and a conductor filling a remaining space of the via. Resistivity of the conductive two-dimensional (2D) material is equal to or lower than 0.25 Ω.µm. The conductive 2D material is graphene or a transition metal dichalcogenide. USE - Semiconductor structure e.g. through silicon via structure for use in high frequency transmission. ADVANTAGE - The structure provides a higher transmission efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor structure, which involves: (a) forming a via through a substrate; (b) forming a liner layer on a sidewall of the via; (c) forming a barrier layer on the liner layer using a conductive 2D material; (d) forming a conductor in a remaining space of the via. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor structure.