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  • 专利标题:   Electrically conductive laminate structure useful in electrical interconnect, comprises graphene region sandwiched between pair of non-graphene regions, where non-graphene region includes electrically conductive non-graphene region.
  • 专利号:   WO2012005851-A2, US2012006580-A1, WO2012005851-A3, TW201205765-A, CN103003921-A, JP2013529859-W, KR2013098979-A, SG186976-A1, US8946903-B2, TW463627-B1, JP5714104-B2, US2015145135-A1, KR2015096528-A, SG186976-B, CN103003921-B, KR1650281-B1, US9997461-B2, US2018261548-A1, US10141262-B2, US2019067202-A1, US2019244910-A1, US10381308-B2
  • 发明人:   SANDHU G S
  • 专利权人:   MICRON TECHNOLOGY INC, SANDHU G S, MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L021/28, B05D005/12, H01B005/00, H05K013/00, H01L021/768, H01L023/52, H01L021/3205, H01L023/522, H01L023/532, C01B031/02, H01B013/00, H01L023/48, H01L029/40, C01B031/04
  • 专利详细信息:   WO2012005851-A2 12 Jan 2012 H01L-021/28 201206 Pages: 44 English
  • 申请详细信息:   WO2012005851-A2 WOUS039465 07 Jun 2011
  • 优先权号:   US833074, KR700494, US611514, KR720975, US975429, US172444, US388754

▎ 摘　　要

NOVELTY - The electrically conductive laminate structure comprises a graphene region (22) sandwiched between a pair of non-graphene regions (26). The graphene monolayers region has a thickness of 1-3. The non-graphene region is electrically conductive non-graphene region and electrically insulative non-graphene region. The graphene region and non-graphene region are nested within one another. USE - The electrically conductive laminate structure is useful in an electrical interconnect (claimed), which is useful for integrated circuits of electronic systems including computers, cars, airplanes, clocks and cellular phones. ADVANTAGE - The electrically conductive laminate structure is compact and efficient, and exhibits high electrical conductivity, good current density, and low contact resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) an electrical interconnect; and (2) a method of forming an electrical interconnect. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a semiconductor construction. Base (12) Graphene region (22) Non-graphene region (26) Interconnect (36) Insulative material (40) Contact opening. (42)