▎ 摘　　要

NOVELTY - Preparing graphene crystal using plasma enhanced chemical vapor deposition device comprises placing the insulating substrate in the synthesis chamber, pumping the synthesis chamber to vacuum, introducing growth gas into the synthesis chamber, raising the temperature of the insulating substrate to the preset nucleation temperature, generating plasma by the radio frequency power supply, keeping the preset nucleation temperature preset nucleation time, so that the insulating substrate is generated with graphene small crystal nucleus, adjusting the temperature of the insulating substrate to the preset growth temperature, and keeping the preset growth temperature for preset growth time, so that the graphene small crystal nucleus on the insulating substrate is transversely grown along their own edge as large size graphene crystal. USE - The method is useful for preparing graphene crystal using plasma enhanced chemical vapor deposition device. ADVANTAGE - The method realizes the preparation of large size graphene.