▎ 摘　　要

NOVELTY - The wafer comprises a substrate and a buffer sequentially laminated on the substrate, an intrinsic gallium nitride layer, an N-type GaN layer (4), a multi-quantum well layer (5), and an electron blocking layer (6). The P-type semiconductor layer (7) comprises an AlmN1-m separation layer, graphene layer, magnesium layer, Mg layer, manganese nitrate three-dimensional layer and P-doped gold nitrate layer, where the AlmN 1-m separating layer, the graphene layer and the magnesium layer are sequentially stacked to form the P-sulfonate semiconductor layers. The value range of m is 0.1-0.3, and the value of n is about 0.2 -0.4. USE - LED epitaxial wafer for an LED (claimed) i.e. gallium nitride-based LED, used in solid illumination field and display field. ADVANTAGE - The light emitting diode epitaxial wafer has improved light emitting efficiency and surface flatness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for method for preparing the LED epitaxial wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the LED epitaxial wafer. 3Intrinsic gan layer 4N-type gan layer 5Multi-quantum well layer 6Electron blocking layer 7P-type semiconductor layer