▎ 摘　　要

NOVELTY - The method involves providing a graphene film with graphene formed on a substrate, where the substrate is selected from one of a silicon chip, an electric element or a transistor. The graphene film is placed in a vacuum environment. The graphene film is radiated with an electron beam to obtain a graphene material, where accelerating voltage of the electron beam is 50 KeV and radiating energy of the electron beam is 200-1200 C/cm2. The graphene is formed on the substrate by physical vapor deposition. Current intensity of the electron beam is 70-120 pA. USE - Method for modifying semiconductor properties e.g. N-type, P-type and I-V characteristics, of graphene i.e. semiconductor film. ADVANTAGE - The method enables radiating the graphene film with the electron beam in a low temperature environment to avoid damage of the graphene material resulting from a high temperature environment so as to avoid the need to require subsequent procedures for repairing damaged graphene material, simplify the producing procedures and reduce the industrial cost. The method enables accurately locating and qualitatively controlling the electron beam. DESCRIPTION OF DRAWING(S) - The drawing shows a graph representing relationship between intensity and Raman shift characteristics of a Raman spectrum analysis of graphene materials.