▎ 摘　　要

NOVELTY - Transferring strained graphene on silicon substrate containing oxide layer involves: (S1) dissolving polyvinyl formal in trichloromethane to obtain a polyvinyl formal solution; (S2) soaking a copper foil with graphene grown on the surface in the solution, and drying to obtain a polyvinyl formal film/graphene/copper foil composite material; (S3) attaching a flexible substrate to the film in the composite material, then dissolving the foil, cleaning, and drying to obtain substrate/film/graphene composite material; (S4) dripping liquid on the surface of silicon substrate containing oxide layer, and then enabling the substrate to be attached to the surface where the graphene is located in the composite material to obtain substrate/film/graphene/silicon substrate composite material; and (S5) adhering and fixing the adjacent layers in the composite material, leaving still, drying, then peeling the substrate, dissolving film, cleaning, and drying. USE - The method is useful for transferring strained graphene on silicon substrate containing oxide layer used as ideal microelectronic material for electronic device design and as base of graphene strain engineering device. ADVANTAGE - The method does not perform complex pre-patterning treatment on the silicon substrate containing oxide layer, is convenient and universal, and achieves the transfer of graphene with a strain value of 1.5% and an area of 104 microm2 to silicon substrate containing oxide layer, which greatly improves the strain value and strain area of graphene on the silicon substrate. The transferred graphene has excellent integrity. DETAILED DESCRIPTION - Transferring strained graphene on silicon substrate containing oxide layer involves: (S1) dissolving polyvinyl formal in trichloromethane to obtain a polyvinyl formal solution; (S2) soaking a copper foil with graphene grown on the surface in the solution, taking out, drying to form a polyvinyl formal film on the surface of graphene, and obtaining a polyvinyl formal film/graphene/copper foil composite material; (S3) attaching a flexible substrate to the film in the film/graphene/copper foil composite material, then dissolving the copper foil, cleaning and drying to obtain flexible substrate/film/graphene composite material; (S4) dripping liquid on the surface of silicon substrate containing oxide layer, and then enabling the silicon substrate containing oxide layer to be attached to the surface where the graphene is located in the flexible substrate/film/graphene composite material after strain through the capillary action of the liquid to obtain flexible substrate/film/graphene/silicon substrate containing oxide layer composite material; and (S5) adhering and fixing the adjacent layers in the flexible substrate/film/graphene/silicon substrate containing oxide layer composite material by using a clamping device, leaving still, drying, then peeling the flexible substrate, dissolving the film, cleaning, and drying to obtain graphene/silicon substrate composite material containing oxide layer.