▎ 摘　　要

NOVELTY - A semiconductor graphene comprises silicon carbide substrate directly grown on silicon surface with semiconductor graphene as buffer layer. The semiconductor graphene is single layer and has crystal domain width of 50-200 mu m. USE - The semiconductor graphene is used as channel material for field effect tube (claimed). ADVANTAGE - The semiconductor graphene has field effect tube switch ratio that reaches 104, and it satisfies the requirement of the actual application. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) preparation of the semiconductor graphene comprising subjecting silicon carbide wafer A comprising 6H or 4H type silicon carbide wafer and silicon carbide wafer B comprising 6H type silicon carbide wafer to mechanochemical polishing, ultrasonically cleaning with organic reagent, drying, and coating silicon carbide wafer A with photoresist; and adding photoresist-coated silicon carbide wafer A on the bottom of graphite crucible, putting silicon carbide wafer B on top of graphite crucible opposite to photoresist-coated silicon carbide wafer A, heating graphite crucible in a vacuum environment at 900-950 degrees C for 20-30 minutes, heating to 1200-1350 degrees C under argon atmosphere for 20-30 minutes and increasing temperature to 1540-1650 degrees C for 60-90 minutes; and (2) a field effect tube comprising semiconductor graphene as channel material.